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IXXH100N60B3 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 600V 220A 830000mW 3Pin(3+Tab) TO-247AD

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Documentation:

IXXH100N60B3 Datasheet (7 Pages)

IXXH100N60B3 Datasheet PDF (7 Pages)

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IXXH100N60B3 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Power Dissipation

830 W

Breakdown Voltage (Collector to Emitter)

600 V

Input Power (Max)

830 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

830000 mW

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IXXH100N60B3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXXH100N60B3 Environmental

IXXH100N60B3 Export Classifications

IXXH100N60B3 Function Overview

IXXH100N60B3 Documents

IXXH100N60B3 Datasheet

IXYS Semiconductor

7 Pages / 0.16 MByte

IXXH100N60B3 Other Datasheet PDF

IXYS Semiconductor

6 Pages / 0.16 MByte

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IXXH100N60B3 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 600V 220A 830000mW 3Pin(3+Tab) TO-247AD

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IXYS Semiconductor

Trans IGBT Chip N-CH 600V 190A 830000mW 3Pin(3+Tab) TO-247AD

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