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IXXN110N65C4H1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

SOT-227-4

Description:

Trans IGBT Chip N-CH 650V 210A 750000mW Automotive 4Pin SOT-227B

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Documentation:

IXXN110N65C4H1 Datasheet (8 Pages)

IXXN110N65C4H1 Datasheet PDF (8 Pages)

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IXXN110N65C4H1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

4 Pin

Case/Package

SOT-227-4

Power Dissipation

750 W

Breakdown Voltage (Collector to Emitter)

650 V

Input Capacitance (Cies)

3.69nF @25V

Input Power (Max)

750 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

750000 mW

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IXXN110N65C4H1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXXN110N65C4H1 Environmental

IXXN110N65C4H1 Export Classifications

IXXN110N65C4H1 Function Overview

IXXN110N65C4H1 Documents

IXXN110N65C4H1 Datasheet

IXYS Semiconductor

8 Pages / 0.21 MByte

IXXN110N65C4H1 Other Datasheet PDF

IXYS Semiconductor

8 Pages / 0.21 MByte

IXXN110N65C4 Documents

IXXN110N65C4H1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 650V 210A 750000mW Automotive 4Pin SOT-227B

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