IXXX110N65B4H1

$ 13.295

IXXX110N65B4H1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

Trans IGBT Chip N-CH 650V 250A 880000mW 3Pin(3+Tab) PLUS 247

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Documentation:

IXXX110N65B4H1 Datasheet (8 Pages)

IXXX110N65B4H1 Datasheet PDF (8 Pages)

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IXXX110N65B4H1 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Power Dissipation

880 W

Breakdown Voltage (Collector to Emitter)

650 V

Reverse recovery time

100 ns

Input Power (Max)

880 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

880000 mW

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IXXX110N65B4H1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXXX110N65B4H1 Environmental

IXXX110N65B4H1 Export Classifications

IXXX110N65B4H1 Function Overview

IXXX110N65B4H1 Documents

IXXX110N65B4H1 Datasheet

IXYS Semiconductor

8 Pages / 0.25 MByte

IXXX110N65B4H1 Other Datasheet PDF

IXYS Semiconductor

7 Pages / 0.24 MByte

IXXX110N65B4 Documents

IXXX110N65B4H1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 650V 250A 880000mW 3Pin(3+Tab) PLUS 247

IXXX110N65B4H1 Datasheet PDF

Littelfuse

Insulated Gate Bipolar Transistor,

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