IXXX200N65B4

$ 37.209

IXXX200N65B4 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-247-3

Description:

IGBT Transistors 650V/370A Trench IGBT GenX4 XPT

Pictures:

3D Model

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Product Pictures

Documentation:

IXXX200N65B4 Datasheet (7 Pages)

IXXX200N65B4 Datasheet PDF (7 Pages)

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IXXX200N65B4 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-247-3

Power Dissipation

1150 W

Breakdown Voltage (Collector to Emitter)

650 V

Input Power (Max)

1150 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

1150000 mW

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IXXX200N65B4 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXXX200N65B4 Environmental

IXXX200N65B4 Function Overview

IXXX200N65B4 Documents

IXXX200N65B4 Datasheet

IXYS Semiconductor

7 Pages / 0.23 MByte

IXXX200N65B4 Other Datasheet PDF

IXYS Semiconductor

6 Pages / 0.22 MByte

IXXX200N65 Documents

IXXX200N65B4 Datasheet PDF

IXYS Semiconductor

IGBT Transistors 650V/370A Trench IGBT GenX4 XPT

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