IXYH40N120B3D1 Datasheet PDF - IXYS Semiconductor

●You won"t need to worry about any lagging in your circuit with this IXYH40N120B3D1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 480000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with xpt technology.