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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXYH50N120C3D1 Datasheet PDF
IXYH50N120C3D1
$ 10.109
IXYH50N120C3D1 Datasheet PDF (7 Pages)
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IXYH50N120C3D1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-247-3
Power Dissipation
625000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Reverse recovery time
195 ns
Input Power (Max)
625 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 W

IXYH50N120C3D1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.26 mm
Size-Width
5.3 mm
Size-Height
21.46 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IXYH50N120C3D1 Documents

IXYS Semiconductor
7 Pages / 0.16 MByte
IXYS Semiconductor
7 Pages / 0.17 MByte

IXYH50N120C3 Documents

IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 100A 750000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 90A 625000mW 3Pin(3+Tab) TO-247AD
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