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IXYN100N65C3H1 Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

SOT-227-4

Description:

Igbt Xpt 650V 166A Sot-227B

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Documentation:

IXYN100N65C3H1 Datasheet (8 Pages)

IXYN100N65C3H1 Datasheet PDF (8 Pages)

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IXYN100N65C3H1 Specifications

TYPE

DESCRIPTION

Mounting Style

Chassis

Number of Pins

4 Pin

Case/Package

SOT-227-4

Breakdown Voltage (Collector to Emitter)

650 V

Input Capacitance (Cies)

4.98nF @25V

Input Power (Max)

600 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

600000 mW

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IXYN100N65C3H1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

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IXYN100N65C3H1 Environmental

IXYN100N65C3H1 Function Overview

IXYN100N65C3H1 Documents

IXYN100N65C3H1 Datasheet

IXYS Semiconductor

8 Pages / 0.22 MByte

IXYN100N65C3H1 Other Datasheet PDF

IXYS Semiconductor

7 Pages / 0.22 MByte

IXYN100N65C3 Documents

IXYN100N65C3H1 Datasheet PDF

IXYS Semiconductor

Igbt Xpt 650V 166A Sot-227B

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