JAN2N2369A Datasheet PDF - Microsemi

●Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN JAN2N2369A GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.