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Part Datasheet Search > BJTs > Microsemi > JANTXV2N2905A Datasheet PDF
JANTXV2N2905A
$ 20.46
JANTXV2N2905A Datasheet PDF (7 Pages)
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JANTXV2N2905A Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-5-3
Power Dissipation
0.6 W
Input Capacitance
30 pF
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
100 @150mA, 10V
hFE Max
300
Input Power (Max)
800 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
600 mW

JANTXV2N2905A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

JANTXV2N2905A Documents

Microsemi
7 Pages / 0.63 MByte
Microsemi
7 Pages / 0.63 MByte

JANTXV2N2905 Documents

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Motorola
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, SIMILAR TO TO-39, 3 PIN
TI
600mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39, SIMILAR TO TO-39, 3 PIN
Raytheon
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, SIMILAR TO TO-39, 3 PIN
Microsemi
Trans GP BJT PNP 60V 0.6A 3Pin TO-39
Microsemi
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