●General Description
●The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.
●Features
●· Voltage Supply : 2.7V~3.6V
●· Organization
● - Memory Cell Array : (64M + 2,048K)bit x 8bit
● - Data Register : (512 + 16)bit x8bit multipled by four planes
●· Automatic Program and Erase
● - Page Program : (512 + 16)Byte
● - Block Erase : (16K + 512)Byte
●· 528-Byte Page Read Operation
● - Random Access : 12ms(Max.)
● - Serial Page Access : 50ns(Min.)
●· Fast Write Cycle Time
● - Program time : 200ms(Typ.)
● - Block Erase Time : 2ms(Typ.)
●· Command/Address/Data Multiplexed I/O Port
●· Hardware Data Protection
● - Program/Erase Lockout During Power Transitions
●· Reliable CMOS Floating-Gate Technology
● - Endurance : 100K Program/Erase Cycles
● - Data Retention : 10 Years
●· Command Register Operation
●· Intelligent Copy-Back Operation
●· Package :
● - K9F1208U0M-YCB0, K9F1208U0M-YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
●· Simultaneous Four Page/Block Program/Erase
