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Part Datasheet Search > BJTs > ON Semiconductor > KSA1013YTA Datasheet PDF
KSA1013YTA
$ 0.147
KSA1013YTA Datasheet PDF (6 Pages)
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KSA1013YTA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-226-3
Number of Positions
3 Position
Power Dissipation
900 mW
Breakdown Voltage (Collector to Emitter)
160 V
hFE Min
160 @200mA, 5V
Input Power (Max)
900 mW
DC Current Gain (hFE)
160
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
900 mW

KSA1013YTA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon
Size-Length
5.1 mm
Size-Width
4.1 mm
Size-Height
8.2 mm
Operating Temperature
150℃ (TJ)

KSA1013YTA Documents

ON Semiconductor
6 Pages / 0.14 MByte
ON Semiconductor
9 Pages / 1.79 MByte

KSA1013 Documents

ON Semiconductor
TRANS PNP 160V 1A TO-92L
Fairchild
KSA1013 Series 160V 1A Through Hole PNP Epitaxial Silicon Transistor - TO-92-3
ON Semiconductor
Trans GP BJT PNP 160V 1A 900mW 3Pin TO-92L Bag
Fairchild
Trans GP BJT PNP 160V 1A 3Pin TO-92L Ammo
Fairchild
Trans GP BJT PNP 160V 1A 3Pin TO-92L Bulk
Fairchild
Trans GP BJT PNP 160V 1A 3Pin TO-92L Ammo
ON Semiconductor
TRANS PNP 160V 1A TO-92L
ON Semiconductor
Trans GP BJT PNP 160V 1A 3Pin TO-92L Bulk
Fairchild
Trans GP BJT PNP 160V 1A 3Pin TO-92L Ammo
Fairchild
Trans GP BJT PNP 160V 1A 3Pin TO-92L
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