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Part Datasheet Search > BJTs > ON Semiconductor > KSC2690AYS Datasheet PDF
KSC2690AYS
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KSC2690AYS Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-126-3
Description:
Trans GP BJT NPN 160V 1.2A 1200mW 3Pin(3+Tab) TO-126 Bag
Pictures:
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Product Pictures
Documentation:
KSC2690AYS Datasheet (5 Pages)
KSC2690AYS Datasheet PDF (5 Pages)
View Datasheet
Click page to view the detail

KSC2690AYS Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
155 MHz
Number of Pins
3 Pin
Case/Package
TO-126-3
Number of Positions
3 Position
Power Dissipation
1.2 W
Breakdown Voltage (Collector to Emitter)
160 V
hFE Min
35 @5mA, 5V
Input Power (Max)
1.2 W
DC Current Gain (hFE)
160
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
20 W
View Datasheet >

KSC2690AYS Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon
Size-Length
8 mm
Size-Width
3.25 mm
Size-Height
11 mm
Operating Temperature
150℃ (TJ)
View Datasheet >

KSC2690AYS Documents

KSC2690AYS Datasheet
ON Semiconductor
5 Pages / 0.04 MByte
KSC2690AYS Other Datasheet PDF
ON Semiconductor
7 Pages / 0.16 MByte

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