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KSC3503CS
$ 0.222
KSC3503CS Datasheet PDF (6 Pages)
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KSC3503CS Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
300 V
Current Rating
100 mA
Case/Package
TO-126-3
Polarity
NPN
Power Dissipation
7 W
Breakdown Voltage (Collector to Emitter)
300 V
Continuous Collector Current
0.1A
hFE Min
40 @10mA, 10V
hFE Max
320
Input Power (Max)
7 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃

KSC3503CS Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Bulk
Size-Length
8 mm
Size-Width
3.25 mm
Size-Height
11 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

KSC3503CS Documents

Fairchild
6 Pages / 0.14 MByte
Fairchild
7 Pages / 0.19 MByte

KSC3503 Documents

Samsung
Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ON Semiconductor
NPN Epitaxial Silicon Transistor, 1920-TUBE
ON Semiconductor
Trans GP BJT NPN 300V 0.1A 7000mW 3Pin(3+Tab) TO-126 Tube
Fairchild
Trans GP BJT NPN 300V 0.1A 7000mW 3Pin(3+Tab) TO-126 Rail
ON Semiconductor
Trans GP BJT NPN 300V 0.1A 7000mW 3Pin(3+Tab) TO-126 Bag
Fairchild
Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Bulk
Fairchild
Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Bulk
Fairchild
Trans GP BJT NPN 300V 0.1A 7000mW 3Pin(3+Tab) TO-126 Rail
Fairchild
Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Tube
Fairchild
Trans GP BJT NPN 300V 0.1A 3Pin(3+Tab) TO-126 Tube
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