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Part Datasheet Search > BJTs > ON Semiconductor > KSC5027OTU Datasheet PDF
KSC5027OTU
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KSC5027OTU Datasheet PDF (5 Pages)
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KSC5027OTU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
15 MHz
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Power Dissipation
50 W
Breakdown Voltage (Collector to Emitter)
800 V
hFE Min
20 @200mA, 5V
Input Power (Max)
50 W
DC Current Gain (hFE)
20
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
50000 mW

KSC5027OTU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
9.9 mm
Size-Width
4.5 mm
Size-Height
18.95 mm
Operating Temperature
150℃ (TJ)

KSC5027OTU Documents

ON Semiconductor
5 Pages / 0.05 MByte
ON Semiconductor
6 Pages / 0.23 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
1 Pages / 0.14 MByte

KSC5027 Documents

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Trans GP BJT NPN 800V 3A 3Pin(3+Tab) TO-220
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Trans GP BJT NPN 800V 3A 3Pin(3+Tab) TO-220F
Freescale
TRANS NPN 800V 3A TO-220
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