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KSC945GTA Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-226-3

Description:

Trans GP BJT NPN 50V 0.15A 3Pin TO-92 Ammo

Pictures:

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Documentation:

KSC945GTA Datasheet (7 Pages)

Part Numbering System on2 Page 7 Page

KSC945GTA Datasheet PDF (7 Pages)

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KSC945GTA Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

300 MHz

Number of Pins

3 Pin

Case/Package

TO-226-3

Number of Positions

3 Position

Power Dissipation

0.25 W

Breakdown Voltage (Collector to Emitter)

50 V

hFE Min

200 @1mA, 6V

Input Power (Max)

250 mW

DC Current Gain (hFE)

200

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

250 mW

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KSC945GTA Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Material

Silicon

Size-Length

4.58 mm

Size-Width

3.86 mm

Size-Height

4.58 mm

Operating Temperature

150℃ (TJ)

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KSC945GTA Environmental

KSC945GTA Function Overview

KSC945GTA Documents

KSC945GTA Datasheet

ON Semiconductor

7 Pages / 0.21 MByte

KSC945GTA Other Datasheet PDF

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