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Part Datasheet Search > BJTs > Fairchild > KSE340STU Datasheet PDF
KSE340STU
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KSE340STU Datasheet PDF (4 Pages)
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KSE340STU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
300 V
Current Rating
500 mA
Case/Package
TO-126-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
300 V
Continuous Collector Current
0.5A
hFE Min
30 @50mA, 10V
hFE Max
240
Input Power (Max)
20 W
DC Current Gain (hFE)
30
Operating Temperature (Max)
150 ℃
Power Dissipation (Max)
20 W

KSE340STU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
8 mm
Size-Width
3.25 mm
Size-Height
11 mm
Operating Temperature
150℃ (TJ)

KSE340STU Documents

Fairchild
4 Pages / 0.03 MByte
Fairchild
6 Pages / 0.13 MByte

KSE340 Documents

Fairchild
NPN Epitaxial Silicon Transistor
Samsung
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
ON Semiconductor
Power Bipolar Transistor
Fairchild
Trans GP BJT NPN 300V 0.5A 3Pin(3+Tab) TO-126 Rail
ON Semiconductor
Trans GP BJT NPN 300V 0.5A 3Pin(3+Tab) TO-126 Rail
Fairchild
Trans GP BJT NPN 300V 0.5A 3Pin(3+Tab) TO-126 Bulk
Freescale
TRANS NPN 300V 0.5A TO-126
Fairchild
Trans GP BJT NPN 300V 0.5A 3Pin(3+Tab) TO-126 Rail
ON Semiconductor
Trans GP BJT NPN 300V 0.5A 3Pin(3+Tab) TO-126 Bulk
Fairchild
Kse340 Npn Epitaxial Silicon Transistor
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