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Part Datasheet Search > BJTs > Fairchild > KSE44H11TU Datasheet PDF
KSE44H11TU
$ 0.479
KSE44H11TU Datasheet PDF (4 Pages)
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KSE44H11TU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
80.0 V
Current Rating
10.0 A
Case/Package
TO-220-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
1.67 W
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
10A
hFE Min
60 @2A, 1V
Input Power (Max)
1.67 W
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
50 W

KSE44H11TU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail
Material
Silicon
Size-Length
9.9 mm
Size-Width
4.5 mm
Size-Height
9.2 mm
Operating Temperature
150℃ (TJ)

KSE44H11TU Documents

Fairchild
4 Pages / 0.04 MByte
Fairchild
6 Pages / 0.15 MByte
Fairchild
1 Pages / 0.09 MByte
Fairchild
5 Pages / 0.07 MByte
Fairchild
2 Pages / 0.55 MByte
Fairchild
1 Pages / 0.15 MByte

KSE44H11 Documents

Fairchild
Trans GP BJT NPN 80V 10A 3Pin(3+Tab) TO-220 Bulk
ON Semiconductor
TRANS NPN 80V 10A TO-220
Samsung
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Fairchild
Trans GP BJT NPN 80V 10A 3Pin(3+Tab) TO-220 Rail
ON Semiconductor
Trans GP BJT NPN 80V 10A 3Pin(3+Tab) TO-220 Rail
Freescale
TRANS NPN 80V 10A TO-220
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