L6391DTR Datasheet PDF - ST Microelectronics

●The L6391 is a high voltage device manufactured with the BCD™ “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.

●The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing the microcontroller/DSP.

●An integrated comparator is available for protections against overcurrent, overtemperature, etc.

●Key Features

● High voltage rail up to 600 V

● dV/dt immunity ± 50 V/nsec in full temperature range

● Driver current capability:

● 290 mA source

● 430 mA sink

● Switching times 75/35 nsec rise/fall with 1 nF load

● 3.3 V, 5 V TTL/CMOS inputs with hysteresis

● Integrated bootstrap diode

● Comparator for fault protections

● Smart shutdown function

● Adjustable deadtime

● Interlocking function

● Compact and simplified layout

● Bill of material reduction

● Effective fault protection

● Flexible, easy and fast design