L6491DTR Datasheet PDF - ST Microelectronics

●The L6491 is a high voltage device manufactured with the BCD6 “OFF-LINE” technology. It is a single-chip half-bridge gate driver for N-channel power MOSFET or IGBT.

●The high-side (floating) section is designed to stand a voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing microcontroller/DSP.

●An integrated comparator is available for fast protection against overcurrent, overtemperature, etc.

●Key Features

● High voltage rail up to 600 V

● dV/dt immunity ± 50 V/ns in full temperature range

● Driver current capability: 4 A source/sink

● Switching times 15 ns rise/fall with 1 nF load

● 3.3 V, 5 V TTL/CMOS inputs with hysteresis

● Integrated bootstrap diode

● Comparator for fault protections

● Smart shutdown function

● Adjustable deadtime

● Interlocking function

● Compact and simplified layout

● Bill of material reduction

● Effective fault protection

● Flexible, easy and fast design