LM5114AMF/S7003109 Datasheet PDF - TI

●General Description

●The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOS FETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The LM5114 also has the features necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The LM5114 provides inverting and non-inverting inputs to satisfy require ments for inverting and non-inverting gate drive in a single device type.

●Features

● Independent source and sink outputs for controllable rise and fall times

● +4V to +12.6V single power supply

● 7.6A/1.3A peak sink/source drive current

● 0.23Ωopen-drain pull-down sink output

● 2Ωopen-drain pull-up source output

● 12ns (typical) propagation delay

● Matching delay time between inverting and non-inverting inputs

● TTL/CMOS logic Inputs

● 0.68V input hysteresis

● Up to +14V logic inputs (Regardless of VDD voltage)

● Low input capacitance: 2.5pF (typical)

● -40°C to +125°C operating temperature range

● Pin-to-Pin compatible with MAX5048

●Typical Applications

● Boost converters

● Flyback and forward converters

● Secondary synchronous FETs drive in isolated topologies

● Motor control