LM74610QDGKTQ1 Datasheet PDF - TI

●The LM74610QDGKTQ1 is a Smart Diode Controller Device that can be used with an N-channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq. The LM74610-Q1 controller provides a gate drive for an external N-channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.

● Qualified for automotive applications

● AEC-Q100 qualified-Exceeds HBM ESD classification level2, device CDM ESD classification level C4B

● Maximum reverse voltage of 45V

● No positive voltage limitation to anode terminal

● Charge pump gate driver for external N-channel MOSFET

● Lower power dissipation than Schottky diode/PFET solutions

● Low reverse leakage current

● Zero IQ

● Fast 2µs response to reverse polarity

● Can be used in OR-ing applications

● Meets CISPR25 EMI specification

● Meets automotive ISO7637 transient

● Requirements with a suitable TVS diode

● No peak current limit