●Description
●The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.
●Features
●Supply voltage
● –VDD= 2.7 V to 3.6 V for program, erase and read
● –VDDQ= VDDQIN= 2.4 V to 3.6 V for I/O buffers
● –VPP= 12 V for fast program (optional)
●High performance
● – Access times: 70, 80 ns
● – 56 MHz effective zero wait-state burst read
● – Synchronous burst read
● – Asynchronous page read
●Hardware block protection
● –WPpin for write protect of the 2 outermost parameter blocks and all main blocks
● –RPpin for write protect of all blocks
●Optimized for FDI drivers
● – Fast program / erase suspend latency time < 6 µs
● – Common Flash interface
●Memory blocks
● – 8 parameters blocks (top or bottom)
● – 31 main blocks
●Low power consumption
● – 5 µA typical deep power-down
● – 60 µA typical standby for M58BW016DT/B
● 150 µA typical standby for M58BW016FT/B
● – Automatic standby after asynchronous read
●Electronic signature
● – Manufacturer code: 20h
● – Top device code: 8836h
● – Bottom device code: 8835h
●100 K write/erase cycling + 20 years data retention (minimum)
●High reliability level with over 1 M write/erase cycling sustained
