MB85RS128APNF-G-JNE1 Datasheet PDF - Fujitsu

●The MB85RS128APNF-G-JNE1 is a 128kB SPI Ferroelectric Random Access Memory (FRAM) chip in a configuration of 16384 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RS128A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS128A can be used for 10¹⁰ read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E²PROM. MB85RS128A does not take long time to write data unlike Flash memories nor E²PROM and MB85RS128A takes no wait time.

● Data retention - 10 years

● Operating frequency - 25MHz maximum

● Operating power supply voltage - 3 to 3.6V

● Low power consumption