MBR1100G Datasheet PDF - ON Semiconductor

●The MBR1100G is an axial-lead Schottky Rectifier with epoxy moulded case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.

● Cathode indicated by polarity band

● Low reverse current

● Low stored charge, majority carrier conduction

● Low power loss/high efficiency

● Highly stable oxide passivated junction

● Guard-ring for stress protection

● Low forward voltage

● High surge capacity

● All external surfaces corrosion-resistant