MBR1100RL Datasheet PDF - ON Semiconductor

●. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features

●epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,

●high- frequency inverters, free wheeling diodes, and polarity protection diodes.

●• Low Reverse Current

●• Low Stored Charge, Majority Carrier Conduction

●• Low Power Loss/High Efficiency

●• Highly Stable Oxide Passivated Junction

●• Guard-Ring for Stress Protection

●• Low Forward Voltage

●• 150°C Operating Junction Temperature

●• High Surge Capacity

●Mechanical Characteristics:

●• Case: Epoxy, Molded

●• Weight: 0.4 gram (approximately)

●• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

●• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case

●• Shipped in plastic bags, 1000 per bag

●• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number

●• Polarity: Cathode Indicated by Polarity Band

●• Marking: B1100