$ 68.846

MBR12020CT Datasheet PDF - GeneSiC Semiconductor

Manufacturer:

GeneSiC Semiconductor

Category:

Power Diodes

Case Package:

Twin Tower

Description:

Diode Schottky 20V 120A 3Pin Twin Tower

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

MBR12020CT Datasheet (2 Pages)

MBR12020CT Datasheet PDF (2 Pages)

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MBR12020CT Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

Twin Tower

Forward Voltage

650mV @120A

Forward Current

60 A

Max Forward Surge Current (Ifsm)

800 A

Maximum Forward Voltage (Max)

650 mV

Forward Current (Max)

120000 mA

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

40 ℃

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MBR12020CT Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Operating Temperature

40℃ ~ 175℃

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MBR12020CT Environmental

MBR12020CT Function Overview

MBR12020CT Documents

MBR12020CT Datasheet

GeneSiC Semiconductor

2 Pages / 0.49 MByte

MBR12020CT Other Datasheet PDF

GeneSiC Semiconductor

3 Pages / 0.44 MByte

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