MBRS320T3G Datasheet PDF - ON Semiconductor

●The MBRS320T3G is a surface-mount Schottky Power Rectifier moulded epoxy case. It employs the Schottky barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification or as free-wheeling and polarity protection diodes, in surface-mount applications where compact size and weight are critical to the system.

● Highly-stable oxide passivated junction

● Very low forward-voltage drop

● Excellent ability to withstand reverse avalanche energy transients

● Guard-ring for stress protection

● AEC-Q101 qualified and PPAP capable