MBT35200MT1G Datasheet PDF - ON Semiconductor

●ON Semiconductor has the solution to your circuit"s high-voltage requirements with their PNP MBT35200MT1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 35 V and a maximum emitter base voltage of 5 V.