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Part Datasheet Search > BJTs > ON Semiconductor > MBT3906DW1T1 Datasheet PDF
MBT3906DW1T1
Part 3D Model
$ 0.04
MBT3906DW1T1 Datasheet PDF (6 Pages)
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MBT3906DW1T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
-40.0 V
Current Rating
-200 mA
Case/Package
SC-70-6
Polarity
PNP
Power Dissipation
150 mW
Gain Bandwidth Product
250 MHz
Breakdown Voltage (Collector to Emitter)
40 V
Continuous Collector Current
0.2A
hFE Min
100 @10mA, 1V
Input Power (Max)
150 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

MBT3906DW1T1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Cut Tape (CT)
Size-Length
2 mm
Size-Width
1.25 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MBT3906DW1T1 Documents

ON Semiconductor
6 Pages / 0.12 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
6 Pages / 0.12 MByte

MBT3906DW1 Documents

ON Semiconductor
SC-88 PNP 40V 0.2A
ON Semiconductor
SC-88 PNP 40V 0.2A
ON Semiconductor
SC-88 PNP 40V 0.2A
ON Semiconductor
SC-88 PNP 40V 0.2A
Motorola
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon,
Leshan Radio
Dual General Purpose Transistors
ON Semiconductor
200mA, 40V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-88, 6 PIN
Motorola
200mA, 40V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
Leshan Radio
Small Signal Bipolar Transistor, 0.2A I(C), PNP,
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