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Part Datasheet Search > MOSFETs > ON Semiconductor > MGSF1N02LT1G Datasheet PDF
MGSF1N02LT1G
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MGSF1N02LT1G Datasheet PDF (4 Pages)
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MGSF1N02LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
20.0 V
Current Rating
750 mA
Case/Package
SOT-23-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.075 Ω
Polarity
N-Channel
Power Dissipation
400 mW
Threshold Voltage
1.7 V
Input Capacitance
125 pF
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
750 mA
Rise Time
1 ns
Input Capacitance (Ciss)
125pF @5V(Vds)
Input Power (Max)
400 mW
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
400mW (Ta)

MGSF1N02LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.3 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MGSF1N02LT1G Documents

ON Semiconductor
4 Pages / 0.1 MByte
ON Semiconductor
8 Pages / 0.84 MByte
ON Semiconductor
5 Pages / 0.14 MByte
ON Semiconductor
5 Pages / 0.31 MByte
ON Semiconductor
1 Pages / 0.15 MByte

MGSF1N02LT1 Documents

ON Semiconductor
Trans MOSFET N-CH 20V 0.75A 3Pin SOT-23 T/R
Motorola
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Leshan Radio
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
ON Semiconductor
SOT-23 N-CH 20V 0.75A
ON Semiconductor
Trans MOSFET N-CH 20V 0.75A 3Pin SOT-23 T/R
ON Semiconductor
Mosfet, n Sot-23
Leshan Radio
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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