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Part Datasheet Search > MOSFETs > ON Semiconductor > MGSF1N03LT1G Datasheet PDF
MGSF1N03LT1G
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MGSF1N03LT1G Datasheet PDF (5 Pages)
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MGSF1N03LT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
30.0 V
Current Rating
750 mA
Case/Package
SOT-23-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.1 Ω
Polarity
N-Channel
Power Dissipation
730 mW
Threshold Voltage
1.7 V
Input Capacitance
140pF @5V
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
2.10 A, 1.60 mA
Rise Time
1 ns
Input Capacitance (Ciss)
140pF @5V(Vds)
Input Power (Max)
420 mW
Fall Time
8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
420mW (Ta)

MGSF1N03LT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3.04 mm
Size-Width
1.4 mm
Size-Height
1.01 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MGSF1N03LT1G Documents

ON Semiconductor
5 Pages / 0.11 MByte
ON Semiconductor
8 Pages / 0.84 MByte
ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
5 Pages / 0.31 MByte
ON Semiconductor
1 Pages / 0.15 MByte

MGSF1N03LT1 Documents

ON Semiconductor
Trans MOSFET N-CH 30V 2.8A 3Pin SOT-23 T/R
Motorola
N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
ON Semiconductor
MOSFET, Power; Single N-Ch; VDSS 30VDC; RDS(ON) 0.08Ω; ID 1.6A; SOT-23 (TO-236)
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