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MJ11012G
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MJ11012G Datasheet PDF (4 Pages)
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MJ11012G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Voltage Rating (DC)
60.0 V
Current Rating
30.0 A
Case/Package
TO-204-2
Output Voltage
60 V
Output Current
30 A
Number of Positions
2 Position
Polarity
NPN
Power Dissipation
200 W
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
30A
hFE Min
1000 @20A, 5V
Input Power (Max)
200 W
DC Current Gain (hFE)
1000
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-55 ℃
Gain Bandwidth
4MHz (Min)
Power Dissipation (Max)
200000 mW
Input Voltage
5 V

MJ11012G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Length
39.37 mm
Size-Width
26.67 mm
Size-Height
8.51 mm
Operating Temperature
-55℃ ~ 200℃ (TJ)

MJ11012G Documents

ON Semiconductor
4 Pages / 0.11 MByte
ON Semiconductor
5 Pages / 0.11 MByte
ON Semiconductor
1 Pages / 0.03 MByte

MJ11012 Documents

ON Semiconductor
TO-204-2 NPN 60V 30A
Solid State
SOLID STATE MJ11012 Bipolar (BJT) Single Transistor, Darlington, NPN, 60V, 200W, 30A, 1000 hFE
Motorola
TRANS NPN DARL 60V 30A TO-3
Central Semiconductor
Leaded Power Transistor Darlington
ST Microelectronics
30A, 60V, NPN, Si, POWER TRANSISTOR, TO-3
Advanced Semiconductor
Transistor
Mospec
POWER TRANSISTORS(30A,60-120V,200W)
Inchange Semiconductor
Transistor
New Jersey Semiconductor
Power Transistors
Solid State Devices
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