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Part Datasheet Search > BJTs > ON Semiconductor > MJ11022G Datasheet PDF
MJ11022G
$ 5.161
MJ11022G Datasheet PDF (5 Pages)
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MJ11022G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Voltage Rating (DC)
250 V
Current Rating
15.0 A
Case/Package
TO-204-2
Number of Positions
2 Position
Polarity
NPN
Power Dissipation
150 W
Breakdown Voltage (Collector to Emitter)
250 V
Continuous Collector Current
15A
hFE Min
400 @10A, 5V
hFE Max
15000
Input Power (Max)
175 W
DC Current Gain (hFE)
15
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
3MHz (Min)
Power Dissipation (Max)
175000 mW

MJ11022G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Size-Width
26.67 mm
Operating Temperature
-65℃ ~ 200℃ (TJ)

MJ11022G Documents

ON Semiconductor
5 Pages / 0.12 MByte
ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
1 Pages / 0.03 MByte

MJ11022 Documents

ON Semiconductor
TO-204-2 NPN 250V 15A
Motorola
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200W
Inchange Semiconductor
Transistor
Mospec
POWER TRANSISTORS(15A,150-250V,175W)
New Jersey Semiconductor
Trans Darlington NPN 250V 15A 3Pin(2+Tab) TO-204 Tray
ON Semiconductor
TO-3 NPN 250V 15A
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