MJB44H11G Datasheet PDF - ON Semiconductor

●The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.

● Low collector to emitter saturation voltage (VCE (sat) = 1V maximum at 8A)

● Fast switching speeds

● Complementary pairs simplifies designs

● ESD rating - 3B > 8000V human body model, C > 400V machine model

● 5V Emitter to base voltage (VEBO)

● 2.5°C/W Thermal resistance, junction to case

● 7.5°C/W Thermal resistance, junction to ambient