MJB45H11G Datasheet PDF - ON Semiconductor

●Jump-start your electronic circuit design with this versatile PNP MJB45H11G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.