MJB45H11T4G Datasheet PDF - ON Semiconductor

●This specially engineered PNP MJB45H11T4G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.