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Part Datasheet Search > BJTs > ON Semiconductor > MJD112-1G Datasheet PDF
MJD112-1G
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MJD112-1G Datasheet PDF (2 Pages)
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MJD112-1G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
2.00 A
Case/Package
TO-251-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
2A
hFE Min
1000 @2A, 3V
hFE Max
12000
Input Power (Max)
1.75 W
DC Current Gain (hFE)
12000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
25MHz (Min)
Power Dissipation (Max)
20 W

MJD112-1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.73 mm
Size-Width
2.38 mm
Size-Height
6.35 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJD112-1G Documents

ON Semiconductor
2 Pages / 0.19 MByte
ON Semiconductor
8 Pages / 0.13 MByte
ON Semiconductor
2 Pages / 0.08 MByte
ON Semiconductor
13 Pages / 0.34 MByte

MJD1121 Documents

ON Semiconductor
IPAK NPN 100V 2A
Samsung
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
Motorola
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Motorola
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
ON Semiconductor
IPAK NPN 100V 2A
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