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Part Datasheet Search > BJTs > ON Semiconductor > MJD112G Datasheet PDF
MJD112G
$ 0.281

MJD112G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-252-3
Description:
DPAK NPN 100V 2A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
MJD112G Datasheet (10 Pages)
Package Outline Dimension on9 Page10 Page
Package Footprint Pad Layout on9 Page
Part Numbering System on1 Page8 Page10 Page
MJD112G Application Note (13 Pages)
MJD112G Datasheet PDF (10 Pages)
View Datasheet
Click page to view the detail

MJD112G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
2.00 A
Case/Package
TO-252-3
Halogen Free Status
Halogen Free
Output Voltage
100 V
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
1.75 W
Breakdown Voltage (Collector to Emitter)
100 V
Thermal Resistance
71.4℃/W (RθJA)
Continuous Collector Current
2A
hFE Min
1000
hFE Max
12000
Input Power (Max)
1.75 W
DC Current Gain (hFE)
12000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
25MHz (Min)
Power Dissipation (Max)
20 W
Input Voltage
5 V
View Datasheet >

MJD112G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)
View Datasheet >

MJD112G Documents

MJD112G Datasheet
ON Semiconductor
10 Pages / 0.14 MByte
MJD112G Other Datasheet PDF
ON Semiconductor
11 Pages / 0.15 MByte
MJD112G Drawing Diagrams
ON Semiconductor
2 Pages / 0.08 MByte
MJD112G Application Note
ON Semiconductor
13 Pages / 0.34 MByte

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