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MJD112T4G
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MJD112T4G Datasheet PDF (10 Pages)
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MJD112T4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
2.00 A
Case/Package
TO-252-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
2A
hFE Min
1000 @2A, 3V
hFE Max
12000
Input Power (Max)
1.75 W
DC Current Gain (hFE)
12
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
25MHz (Min)
Power Dissipation (Max)
1750 mW

MJD112T4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJD112T4G Documents

ON Semiconductor
10 Pages / 0.14 MByte
ON Semiconductor
9 Pages / 0.1 MByte
ON Semiconductor
2 Pages / 0.08 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
5 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MJD112T4 Documents

ST Microelectronics
Trans Darlington NPN 100V 2A 20000mW 3Pin(2+Tab) TO-252 T/R
ON Semiconductor
Trans Darlington NPN 100V 2A 1750mW 3Pin(2+Tab) DPAK T/R
Motorola
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20W
Continental Device
Transistor
ON Semiconductor
DPAK NPN 100V 2A
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