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Part Datasheet Search > BJTs > ON Semiconductor > MJD117TF Datasheet PDF
MJD117TF
$ 0.156
MJD117TF Datasheet PDF (10 Pages)
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MJD117TF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Positions
3 Position
Power Dissipation
1.75 W
Breakdown Voltage (Collector to Emitter)
100 V
hFE Min
1000 @2A, 3V
Input Power (Max)
1.75 W
DC Current Gain (hFE)
1000
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
25MHz (Min)
Power Dissipation (Max)
1750 mW

MJD117TF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
150℃ (TJ)

MJD117TF Documents

ON Semiconductor
10 Pages / 0.14 MByte
ON Semiconductor
7 Pages / 0.15 MByte
ON Semiconductor
2 Pages / 0.08 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
1 Pages / 0.15 MByte

MJD117 Documents

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Jiangsu Changjiang Electronics Technology
Transistor
Micro Commercial Components
Power Bipolar Transistor,
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