MJD210 Datasheet PDF - Motorola

●SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

●MJD200 NPN

●MJD210 PNP

●NPN/PNP Silicon DPAK For Surface Mount Applications

●. . . designed for low voltage, low–power, high–gain audio amplifier applications.

●• Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

●• High DC Current Gain — hFE= 70 (Min) @ IC= 500 mAdc

●                                                              = 45 (Min) @ IC= 2 Adc

●                                                              = 10 (Min) @ IC= 5 Adc

●• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

●• Straight Lead Version in Plastic Sleeves (“–1” Suffix)

●• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

●• Low Collector–Emitter Saturation Voltage —VCE(sat)= 0.3 Vdc (Max) @ IC= 500 mAdc

●                                                                      = 0.75 Vdc (Max) @ IC= 2.0 Adc

●• HighCurrent–Gain — Bandwidth Product — fT= 65 MHz (Min) @ IC= 100 mAdc

●• Annular Construction for Low Leakage — ICBO= 100 nAdc @ Rated VCB