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MJD2955T4G
$ 0.271
MJD2955T4G Datasheet PDF (6 Pages)
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MJD2955T4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
2 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-10.0 A
Case/Package
TO-252-3
Number of Positions
3 Position
Polarity
N-Channel, P-Channel
Power Dissipation
1.75 W
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
10A
hFE Min
20 @4A, 4V
Input Power (Max)
1.75 W
DC Current Gain (hFE)
5
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1750 mW

MJD2955T4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MJD2955T4G Documents

ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
8 Pages / 0.24 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
5 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MJD2955T4 Documents

ST Microelectronics
Trans GP BJT PNP 60V 10A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
Trans GP BJT PNP 60V 10A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
DPAK PNP 60V 10A
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