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MJD3055T4G
$ 0.249
MJD3055T4G Datasheet PDF (4 Pages)
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MJD3055T4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
2 MHz
Number of Pins
4 Pin
Voltage Rating (DC)
60.0 V
Current Rating
10.0 A
Case/Package
TO-252-3
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
1.75 W
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
10A
hFE Min
20 @4A, 4V
Input Power (Max)
1.75 W
DC Current Gain (hFE)
5
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1750 mW

MJD3055T4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MJD3055T4G Documents

ON Semiconductor
4 Pages / 0.04 MByte
ON Semiconductor
8 Pages / 0.24 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
5 Pages / 0.04 MByte

MJD3055T4 Documents

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