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Part Datasheet Search > BJTs > ON Semiconductor > MJD31C1G Datasheet PDF
MJD31C1G
$ 0.272

MJD31C1G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-251-3
Description:
IPAK NPN 100V 3A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
MJD31C1G Datasheet (2 Pages)MJD31C1G Application Note (10 Pages)
MJD31C1G Datasheet PDF (2 Pages)
View Datasheet
Click page to view the detail

MJD31C1G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
3 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
3.00 A
Case/Package
TO-251-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
15 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
3A
hFE Min
10 @3A, 4V
Input Power (Max)
1.56 W
DC Current Gain (hFE)
10
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1560 mW
View Datasheet >

MJD31C1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
2.38 mm
Size-Height
6.22 mm
Operating Temperature
-65℃ ~ 150℃
View Datasheet >

MJD31C1G Documents

MJD31C1G Datasheet
ON Semiconductor
2 Pages / 0.07 MByte
MJD31C1G Other Datasheet PDF
ON Semiconductor
10 Pages / 0.09 MByte
MJD31C1G Application Note
ON Semiconductor
10 Pages / 0.09 MByte
MJD31C1G Notice File
ON Semiconductor
5 Pages / 0.04 MByte

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