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MJD31CT4G
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MJD31CT4G Datasheet PDF (7 Pages)
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MJD31CT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
3 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
3.00 A
Case/Package
TO-252-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
15 W
Gain Bandwidth Product
3 MHz
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
3A
hFE Min
10 @3A, 4V
Input Power (Max)
1.56 W
DC Current Gain (hFE)
10
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1560 mW

MJD31CT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJD31CT4G Documents

ON Semiconductor
7 Pages / 0.16 MByte
ON Semiconductor
10 Pages / 0.09 MByte
ON Semiconductor
11 Pages / 0.17 MByte
ON Semiconductor
5 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.13 MByte

MJD31CT4 Documents

ST Microelectronics
Trans GP BJT NPN 100V 3A 15000mW 3Pin(2+Tab) TO-252 T/R
ON Semiconductor
Trans GP BJT NPN 100V 3A 1560mW 3Pin(2+Tab) DPAK T/R
Motorola
Trans GP BJT NPN 100V 3A 3Pin(2+Tab) DPAK
Jiangsu Changjiang Electronics Technology
Transistor
ON Semiconductor
DPAK NPN 100V 3A
ST Microelectronics
TO-252 NPN 100V 3A
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