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MJD350T4G
$ 0.174
MJD350T4G Datasheet PDF (2 Pages)
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MJD350T4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Voltage Rating (DC)
-300 V
Current Rating
-500 mA
Case/Package
TO-252-3
Number of Positions
4 Position
Polarity
PNP, P-Channel
Power Dissipation
15 W
Breakdown Voltage (Collector to Emitter)
300 V
Continuous Collector Current
0.5A
hFE Min
30 @50mA, 10V
Input Power (Max)
1.56 W
DC Current Gain (hFE)
30
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1560 mW

MJD350T4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJD350T4G Documents

ON Semiconductor
2 Pages / 0.19 MByte
ON Semiconductor
7 Pages / 0.17 MByte
ON Semiconductor
7 Pages / 0.11 MByte
ON Semiconductor
5 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MJD350T4 Documents

ST Microelectronics
Trans GP BJT PNP 300V 0.5A 15000mW 3Pin(2+Tab) DPAK T/R
ON Semiconductor
Trans GP BJT PNP 300V 0.5A 1560mW 3Pin(2+Tab) DPAK T/R
Motorola
SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15W
ON Semiconductor
DPAK PNP 300V 0.5A
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