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MJD41CT4G
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MJD41CT4G Datasheet PDF (6 Pages)
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MJD41CT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
3 MHz
Number of Pins
4 Pin
Voltage Rating (DC)
100 V
Current Rating
6.00 A
Case/Package
TO-252-3
Number of Positions
4 Position
Polarity
NPN
Power Dissipation
1.75 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
6A
hFE Min
15 @3A, 4V
Input Power (Max)
1.75 W
DC Current Gain (hFE)
15
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1750 mW

MJD41CT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJD41CT4G Documents

ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
8 Pages / 0.08 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
5 Pages / 0.04 MByte

MJD41CT4 Documents

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DPAK NPN 100V 6A
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SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20W
Jiangsu Changjiang Electronics Technology
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ON Semiconductor
DPAK NPN 100V 6A
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