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Part Datasheet Search > BJTs > ST Microelectronics > MJD44H11T4 Datasheet PDF
MJD44H11T4
$ 0.187

MJD44H11T4 Datasheet PDF - ST Microelectronics

Manufacturer:
ST Microelectronics
Category:
BJTs
Case Package:
TO-252-3
Description:
Trans GP BJT NPN 80V 8A 20000mW 3Pin(2+Tab) DPAK T/R
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
MJD44H11T4 Datasheet (11 Pages)
Package Outline Dimension on5 Page6 Page7 Page
MJD44H11T4 Application Note (8 Pages)
MJD44H11T4 Datasheet PDF (11 Pages)
View Datasheet
Click page to view the detail

MJD44H11T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
80.0 V
Current Rating
8.00 A
Case/Package
TO-252-3
Number of Positions
3 Position
Polarity
NPN
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
80 V
hFE Min
40 @4A, 1V
Input Power (Max)
20 W
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
20000 mW
View Datasheet >

MJD44H11T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.6 mm
Size-Width
6.2 mm
Size-Height
2.4 mm
Operating Temperature
150℃ (TJ)
View Datasheet >

MJD44H11T4 Documents

MJD44H11T4 Datasheet
ST Microelectronics
11 Pages / 0.38 MByte
MJD44H11T4 Application Note
ST Microelectronics
8 Pages / 0.08 MByte
MJD44H11T4 Notice File
ST Microelectronics
5 Pages / 0.04 MByte
MJD44H11T4 Other References
ST Microelectronics
1 Pages / 0.13 MByte

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