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MJD45H11 Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

BJTs

Case Package:

TO-252-3

Description:

Bipolar Transistors - BJT 8A 80V 20W PNP

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

MJD45H11 Datasheet (11 Pages)

Package Outline Dimension on5 Page 6 Page 7 Page

MJD45H11 Application Note (13 Pages)

MJD45H11 Datasheet PDF (11 Pages)

View Datasheet

Click page to view the detail

MJD45H11 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Voltage Rating (DC)

-80.0 V

Current Rating

-8.00 A

Case/Package

TO-252-3

Polarity

PNP

Power Dissipation

20 W

Breakdown Voltage (Collector to Emitter)

80 V

Continuous Collector Current

hFE Min

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

View Datasheet >

MJD45H11 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Packaging

Tube

Size-Length

6.73 mm

Size-Width

6.22 mm

Size-Height

2.38 mm

Minimum Packing Quantity

2500

View Datasheet >

MJD45H11 Environmental

MJD45H11 Export Classifications

MJD45H11 Function Overview

MJD45H11 Documents

MJD45H11 Datasheet

ON Semiconductor

11 Pages / 0.38 MByte

MJD45H11 Other Datasheet PDF

ON Semiconductor

8 Pages / 0.1 MByte

MJD45H11 Drawing Diagrams

ON Semiconductor

2 Pages / 0.08 MByte

MJD45H11 Application Note

ON Semiconductor

13 Pages / 0.34 MByte

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MJD Series PNP 1.75W 80V 8A SMT Epitaxial Silicon Transistor - TO-252-3

MJD45H11 Datasheet PDF

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