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Part Datasheet Search > BJTs > ON Semiconductor > MJD45H11G Datasheet PDF
MJD45H11G
$ 0.461

MJD45H11G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-252-3
Description:
DPAK PNP 80V 8A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
MJD45H11G Datasheet (8 Pages)
Package Outline Dimension on7 Page8 Page
Package Footprint Pad Layout on7 Page
Part Numbering System on1 Page6 Page8 Page
MJD45H11G Application Note (13 Pages)
MJD45H11G Datasheet PDF (8 Pages)
View Datasheet
Click page to view the detail

MJD45H11G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
90 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-80.0 V
Current Rating
-8.00 A
Case/Package
TO-252-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Polarity
PNP
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
80 V
Thermal Resistance
6.25℃/W (RθJC)
Continuous Collector Current
8A
hFE Min
40 @4A, 1V
Input Power (Max)
1.75 W
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Junction Temperature
-55℃ ~ 150℃
Power Dissipation (Max)
1750 mW
View Datasheet >

MJD45H11G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 150℃
View Datasheet >

MJD45H11G Documents

MJD45H11G Datasheet
ON Semiconductor
8 Pages / 0.12 MByte
MJD45H11G Other Datasheet PDF
ON Semiconductor
9 Pages / 0.12 MByte
MJD45H11G Drawing Diagrams
ON Semiconductor
2 Pages / 0.08 MByte
MJD45H11G Application Note
ON Semiconductor
13 Pages / 0.34 MByte
MJD45H11G Notice File
ON Semiconductor
5 Pages / 0.04 MByte
MJD45H11G Other References
ON Semiconductor
1 Pages / 0.14 MByte

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